Heterogeneously integrated III-V/silicon distributed feedback lasers.

نویسندگان

  • S Keyvaninia
  • S Verstuyft
  • L Van Landschoot
  • F Lelarge
  • G-H Duan
  • S Messaoudene
  • J M Fedeli
  • T De Vries
  • B Smalbrugge
  • E J Geluk
  • J Bolk
  • M Smit
  • G Morthier
  • D Van Thourhout
  • G Roelkens
چکیده

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

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عنوان ژورنال:
  • Optics letters

دوره 38 24  شماره 

صفحات  -

تاریخ انتشار 2013