Heterogeneously integrated III-V/silicon distributed feedback lasers.
نویسندگان
چکیده
Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.
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ورودعنوان ژورنال:
- Optics letters
دوره 38 24 شماره
صفحات -
تاریخ انتشار 2013